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InAs nanowire field-effect transistors

Based on

1 Articles
2016 Most recent source

Composition

1

p+-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

InAs nanowires

InAs NW
Type
Formula
Role
4

titanium-gold layer

Ti/Au metal pads Ti/Au film
Type Nano Material
Formula
Role source
5

titanium-gold layer

Ti/Au metal pads Ti/Au film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
capacitance between channel and gate electrode

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. xBR8DWYwtyDtiTN8kJsM
Product

InAs nanowire field-effect transistors

Method 2

Type: Physical formation
Source:
Starting materials
  1. 3spC9cFEOGzvE6DjQEGT
Product

InAs nanowire field-effect transistors

References

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