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n-channel metal oxide semiconductor logic inverter

Based on

1 Articles
2016 Most recent source

Composition

1

soda-lime-silica glass

soda-lime glass glass
Type Complex Compound
Formula
Role substrate
2

a-Si:H film

Type
Formula
Role
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role buffer layer
4

tin-doped indium oxide

indium tin oxide ITO
Type
Formula
Role
5

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
6

IZO

Type Complex Compound
Formula
Role channels
7

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role passivation layer

Properties

General physical and chemical properties

Property Value Source
drain current dependent on drain voltage

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Applications

Area Application Source
electronics

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Characterization

Method Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • soda-lime-silica glass
  • silicon hydride
Product

n-channel metal oxide semiconductor logic inverter

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • soda-lime-silica glass
  • silicon hydride
Product

n-channel metal oxide semiconductor logic inverter

References

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