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few-layer MoS2-based field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role tunneling oxide
4

molybdenum disulfide nanosheets

few-layer molybdenum sulfide MoS2 nanosheets few-layer MoS2 MoS2 sheets
Type Nano Material
Formula
Role channel layer
5

chromium/gold electrode material

Cr/Au electrode material gold/chromium bilayer chromium-gold layer chromium/gold film chromium-gold film chromium/gold Au/Cr bilayer Cr/Au bilayer gold surface Cr/Au layer Cr/Au film Cr-Au film Cr/Au
Type Nano Material
Formula
Role source
6

chromium/gold electrode material

Cr/Au electrode material gold/chromium bilayer chromium-gold layer chromium/gold film chromium-gold film chromium/gold Au/Cr bilayer Cr/Au bilayer gold surface Cr/Au layer Cr/Au film Cr-Au film Cr/Au
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

few-layer MoS2-based field-effect transistor

References

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