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graphene nanoribbon-based field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

highly p-doped silicon

Si++
Type Complex Compound
Formula
Role gate
2

100 nm thick SiO2 substrate

100 nm-thick silica layer silicon oxide nanolayer 100 nm thick SiO2 layer 100-nm-thick SiO2 layer silicon dioxide film SiO2 insulator layer silicon oxide layer silica nanofilm SiO2 nanofilm silica layer silica film SiO2 layer SiO2 layer SiO2 film
Type Nano Material
Formula
Role gate dielectrics
3

gold film

Au film
Type Nano Material
Formula
Role source
4

gold film

Au film
Type Nano Material
Formula
Role drain
5

graphene nanoribbons

GNR
Type Nano Material
Formula
Role channels

Properties

General physical and chemical properties

Property Value Source
field-effect mobility

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Applications

Area Application Source
electronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. gkrc
Product

graphene nanoribbon-based field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  1. Coyg
Product

graphene nanoribbon-based field-effect transistor

References

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