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Cu-In-S colloidal quantum-dot-light-emitting diode

Based on

1 Articles
2016 Most recent source

Composition

1

indium tin oxide glass

ITO coated glass ITO glass
Type Complex Compound
Formula
Role anode
2

poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) film

PEDOT:PSS film
Type Nano Material
Formula
Role hole injection layer
3

poly((9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-s-butylphenyl))diphenyl-amine) film

TFB film
Type Nano Material
Formula
Role hole transport layer
4

Cu-In-S/zinc sulfide quantum dots film

CIS/ZnS quantum dots film CIS/ZnS QD film
Type Nano Material
Formula
Role emission layer
5

zinc oxide nanoparticles film

ZnO NP film
Type Nano Material
Formula
Role electron transport layer
6

100 nm thick aluminium layer

100 nm-thick aluminium layer 100-nm thick aluminium layer 100 nm thick alumnium layer Al gate electrode aluminium layer aluminium film aluminium slab aluminum film cathode layer Al electrode Al thin film Al layer Al films Al film Al slab
Type Nano Material
Formula
Role cathode

Properties

General physical and chemical properties

Property Value Source
current density

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
electroluminescence dependent on voltage

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • indium tin oxide glass
  1. GN
  2. TXrLe
Product

Cu-In-S colloidal quantum-dot-light-emitting diode

Method 2

Type: Physical formation
Source:
Starting materials
  • indium tin oxide glass
  1. NE
  2. GfIgL
Product

Cu-In-S colloidal quantum-dot-light-emitting diode

Method 3

Type: Physical formation
Source:
Starting materials
  • indium tin oxide glass
  1. GX
  2. o3xTO
Product

Cu-In-S colloidal quantum-dot-light-emitting diode

References

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