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non-volatile memory device

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

molybdenum sulfide nanoparticles

molybdenum sulfide monolayer MoS2 nanoparticles MoS2 monolayer
Type Nano Material
Formula
Role floating gate
4

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role tunneling oxide
5

molybdenum disulfide nanosheets

few-layer molybdenum sulfide MoS2 nanosheets few-layer MoS2 MoS2 sheets
Type Nano Material
Formula
Role channel layer
6

chromium/gold electrode material

Cr/Au electrode material gold/chromium bilayer chromium-gold layer chromium/gold film chromium-gold film chromium/gold Cr/Au bilayer Au/Cr bilayer gold surface Cr/Au layer Cr/Au film Cr-Au film Cr/Au
Type Nano Material
Formula
Role source
7

chromium/gold electrode material

Cr/Au electrode material gold/chromium bilayer chromium-gold layer chromium/gold film chromium-gold film chromium/gold Cr/Au bilayer Au/Cr bilayer gold surface Cr/Au layer Cr/Au film Cr-Au film Cr/Au
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on program/erase state

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

non-volatile memory device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

non-volatile memory device

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
Product

non-volatile memory device

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
Product

non-volatile memory device

Size: not specified

Medium/Support: none

References

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