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Au/Cr/MoS2/h-BN/Gr/PI/SiO2/Si memory device

Based on

1 Articles
2016 Most recent source

Composition

1

single layer graphene

monolayer graphene one layer graphene graphene
Type Nano Material
Formula
Role gate
2

hexagonal boron nitride flakes

h-BN nanosheet h-BN flakes h-BN film
Type Nano Material
Formula
Role insulators
3

molybdenum disulfide monolayer

molybdenum disulfide nanosheet single-layered MoS2 nanosheet molybdenum sulfide nanosheet monolayer MoS2 sheet MoS2 nanosheets MoS2 monolayers MoS2 monolayer monolayer MoS2 MoS2 nanosheet MoS2 cluster MoS2 flakes MoS2 strip
Type Nano Material
Formula
Role semiconducting channel
4

Cr/Au film

Cr/Au
Type Nano Material
Formula
Role source
5

Cr/Au film

Cr/Au
Type Nano Material
Formula
Role drain
6

polyimide/silica/silicon

PI/SiO2/Si
Type Complex Compound
Formula
Role substrate

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si wafer
  • polyamic acid
Product

Au/Cr/MoS2/h-BN/Gr/PI/SiO2/Si memory device

References

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