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vertically integrated Si nanowire-based unified memory device

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

polycrystalline silicon

poly silicon poly-silicon polysilicon silicon poly-Si pc-Si p-Si Si
Type Single Compound
Formula Si
Role gate
3

oxide/nitride/oxide-coated boron-doped silicon nanowire

O/N/O-coated boron-doped Si NW
Type
Formula
Role
4

boron-doped Si

Type Complex Compound
Formula
Role source
5

boron-doped Si

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. 9E5E8m4
Product

vertically integrated Si nanowire-based unified memory device

Size: not specified

Medium/Support: none

References

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