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back-gate few-layer p-type MoS2 FET

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role back gate insulator
3

molybdenum(IV) sulfide thin film

molybdenum disulfide thin film molybdenum sulfide thin film
Type Nano Material
Formula
Role back gate
4

Ti/Au

Type Complex Compound
Formula
Role source
5

Ti/Au

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
drain-source current

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. 9OeWdPr9jUSRB7MkX8ZID82
Product

back-gate few-layer p-type MoS2 FET

References

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