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ITO/TiO2/Al resistance-switching random access memory

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

aluminium

aluminum
Type
Formula Al
Role
4

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide oxidized aluminium aluminium suboxide aluminium oxide aluminum oxide alumina
Type
Formula AlO(x)
Role
5

titanium dioxide (rutile)

rutile
Type Single Compound
Formula TiO2
Role electron trapping layer
6

TiOx/Ti-oxynitride

Type
Formula
Role
7

titanium nitride

Type Single Compound
Formula TiN
Role electrodes
8

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role transparent electrodes

Properties

General physical and chemical properties

Property Value Source
electric current dependent on cycle number

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

ITO/TiO2/Al resistance-switching random access memory

References

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