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back-gated ReSe2 transistor device

Based on

1 Articles
2016 Most recent source

Composition

1

boron-doped silicon

boron-doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

rhenium diselenide nanosheets

ReSe2 layers
Type Nano Material
Formula
Role channel layer
4

titanium-palladium layer

titanium/palladium film Ti/Pd film
Type Nano Material
Formula
Role source
5

titanium-palladium layer

titanium/palladium film Ti/Pd film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
charge carrier concentration

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Sensor properties

Type of sensor Sensor property Source
light sensor

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Applications

Area Application Source
sensors (excluding biosensors)

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

back-gated ReSe2 transistor device

References

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