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Pt/NKN/TiN resistive random access memory device

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

titanium nitride

Type Single Compound
Formula TiN
Role electrodes
4

(Na0.5K0.5)NbO3 thin film

NKN thin film
Type
Formula
Role
5

platinum

Type Single Compound
Formula Pt
Role auxiliary electrode

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. WZmFAsVSgfSMpcaQV6WVhAsGHt25OXL
  2. CY3tX7
Product

Pt/NKN/TiN resistive random access memory device

References

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