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InGaN-based laser diode

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role nucleation layer
3

aluminum gallium nitride

Type
Formula Al0.35Ga0.65N
Role
4

aluminum gallium nitride

Type
Formula Al0.35Ga0.65N
Role
5

n-doped gallium nitride

n-GaN
Type
Formula
Role
6

aluminium gallium nitride

aluminum gallium nitride AlGaN
Type Single Compound
Formula Al0.05Ga0.95N
Role cladding layer
7

n-doped gallium nitride

n-GaN
Type Complex Compound
Formula
Role waveguide layer
8

indium gallium nitride

Type
Formula In0.02Ga0.98N
Role
9

indium gallium nitride quantum well/indium gallium nitride

In0.1Ga0.9N QW/In0.02Ga0.98N
Type
Formula
Role
10

gallium nitride

Type Single Compound
Formula GaN
Role waveguide layer
11

p-doped aluminum gallium nitride

p-Al0.2Ga0.8N
Type Complex Compound
Formula
Role hole transport layer
12

p-doped aluminum gallium nitride/p-doped gallium nitride film

p-Al0.11Ga0.89N/p-GaN film
Type
Formula
Role
13

p-doped gallium nitride

p-GaN
Type Complex Compound
Formula
Role contacting layer
14

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role isolating layer
15

titanium/platinum/gold film

Ti/Pt/Au film
Type
Formula
Role
16

palladium/platinum/gold

Pd/Pt/Au film
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • ammonia
  • trimethyl aluminum
  1. 1C0M821gbxA1xkYPHoZxiLEQrUb53Jsypk2enpvty7
Product

InGaN-based laser diode

References

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