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multi-level non-volatile nano-crystal memory device

Based on

1 Patents
2011 Most recent source

Composition

1

tunneling insulator/double nanoparticles-embedded charge blocking/tunneling insulator/passivation layer sequence

Type
Formula
Role
2

p-type doped silicon

Type
Formula
Role
3

n-type doped silicon

Type
Formula
Role

Properties

Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hafnium(IV) oxide
  • p-type doped silicon
  • aluminium lanthanum oxide
Product

multi-level non-volatile nano-crystal memory device

References

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