Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

ion-gel-gated electric double layer transistor

Based on

1 Articles
2016 Most recent source

Composition

1

aluminium lanthanum oxide

lanthanum aluminium oxide lanthanum aluminum oxide lanthanum aluminate LAO(001) LAO
Type Single Compound
Formula LaAlO3
Role substrate
2

La0.5Sr0.5CoO3

Type Single Compound
Formula La0.5Sr0.5CoO3
Role channels
3

magnesium

Type Single Compound
Formula Mg
Role source electrode
4

platinum

Type Single Compound
Formula Pt
Role source electrode
5

magnesium

Type Single Compound
Formula Mg
Role drain electrode
6

platinum

Type Single Compound
Formula Pt
Role drain electrode
7

magnesium

Type Single Compound
Formula Mg
Role gate electrode
8

platinum

Type Single Compound
Formula Pt
Role gate electrode
9

poly(vinylidene fluoride-co-hexafluoropropylene)/1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide

P(VDF-HFP)/EMI:TFSI
Type Complex Compound
Formula
Role gate

Properties

General physical and chemical properties

Property Value Source
Arrhenius plot

14 more entries available to subscribers only.

Or, view sample content

Applications

Area Application Source
electronics

0 more entry available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • aluminium lanthanum oxide
  1. EFYK8Vw
  2. kNLQU43I4lP
Product

ion-gel-gated electric double layer transistor

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial