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ReSe2-based transistor device after PPh3 n-doping

Based on

1 Articles
2016 Most recent source

Composition

1

boron-doped silicon

boron-doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

triphenylphosphine-doped rhenium diselenide nanosheets

ReSe2 layers after PPh3 doping ReSe2 layers doped by PPh3 PPh3-doped ReSe2
Type Nano Material
Formula
Role channel layer
4

titanium-palladium layer

titanium/palladium film Ti/Pd film
Type Nano Material
Formula
Role source
5

titanium-palladium layer

titanium/palladium film Ti/Pd film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier concentration

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
sensors (excluding biosensors)

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

ReSe2-based transistor device after PPh3 n-doping

Size: not specified

Medium/Support: none

References

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