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silicon nanowire-based field effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

nickel silicide

Ni silicide
Type Single Compound
Formula NiSi(x)
Role Schottky gate
4

silicon nanowires

silicon NW Si NW SiNW
Type
Formula
Role
5

nickel

Type Single Compound
Formula Ni
Role source
6

nickel

Type Single Compound
Formula Ni
Role drain
7

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role isolation layer
8

(3-aminopropyl)trimethoxysilane moiety

(3-aminopropyl)trimethoxysilane moiety (3-aminopropyl)triethoxysilane moiety γ-aminopropyltriethoxy silane moiety 3-aminopropyltrimethoxysilane moiety γ-aminopropyltriethoxysilane moiety 3-aminopropyltriethoxysilane moiety (3-aminopropyl)trioxysilane moiety (3-aminopropyl)silanetrioxy group 3-aminopropylsilanetrioxy group 3-aminopropylsiloxy fragment 3-aminopropyl silane moiety 3-aminopropylsilane moiety γ-APTES moiety 3-APTS moiety APTES moiety APTMS moiety AMPS moiety APTS moiety APS moiety
Type
Formula -C3H8NO3Si-
Role
9

chromium

Type Single Compound
Formula Cr
Role adhesion layer
10

silver

Type Single Compound
Formula Ag
Role upper gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on gate voltage

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
pH sensor in aqueous droplets

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Product

silicon nanowire-based field effect transistor

Size: not specified

Medium/Support: none

References

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