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vertical resistive switching random access memory device

Based on

1 Articles
2016 Most recent source

Composition

1

titanium nitride

Type Single Compound
Formula TiN
Role electrodes
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role memory switching layer
4

tungsten

Type Single Compound
Formula W
Role electrodes

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • titanium nitride
Product

vertical resistive switching random access memory device

References

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