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WSe2-based vertical GTH device on 3-aminopropyltriethoxysilane-treated SiO2 substrate

Based on

1 Articles
2016 Most recent source

Composition

1

p-doped silicon

p-doped Si silicon p-Si
Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

3-aminopropyltriethoxysilane

APTES
Type
Formula C9H23NO3Si
Role
4

graphene nanosheets

graphene sheets graphene
Type
Formula
Role
5

WSe2 flake

Type
Formula
Role
6

platinum/gold film

Type Nano Material
Formula
Role source
7

platinum/gold film

Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current density dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • 3-aminopropyltriethoxysilane
  1. 9UFMZYnadx0mx1Mt
Product

WSe2-based vertical GTH device on 3-aminopropyltriethoxysilane-treated SiO2 substrate

Size: not specified

Medium/Support: none

References

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