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InGaAs quantum dot-based spin qubit device

Based on

1 Articles
2016 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role substrate
2

aluminum arsenide/gallium arsenide film

AlAs/GaAs film
Type
Formula
Role
3

gallium arsenide

Type Single Compound
Formula GaAs
Role buffer layer
4

carbon-doped gallium arsenide

n+-GaAs
Type Complex Compound
Formula
Role back contact
5

gallium arsenide

Type Single Compound
Formula GaAs
Role buffer layer 2
6

aluminum arsenide/gallium arsenide film

AlAs/GaAs film
Type Nano Material
Formula
Role blocking barrier
7

gallium arsenide

Type Single Compound
Formula GaAs
Role capping layer
8

indium gallium arsenide quantum dots

InGaAs quantum dots InGaAs QD
Type Nano Material
Formula
Role active layer
9

gallium arsenide

Type Single Compound
Formula GaAs
Role capping layer and tunneling barrier
10

carbon-doped gallium arsenide

p+-GaAs
Type
Formula
Role
11

carbon-doped gallium arsenide

p++-GaAs
Type
Formula
Role
12

gold

Type
Formula Au
Role

Properties

Applications

Area Application Nanomaterial Variant Source
tools/devices

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Characterization

Method Nanomaterial Variant Source
fluorescence spectroscopy

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Biological effects

Preparation

References

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