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double-gate WSe2 FET with Al2O3/TiPc as date dielectric

Based on

1 Articles
2016 Most recent source

Composition

1

gold

Type Single Compound
Formula Au
Role back gate
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

p+ Si wafer

Type Complex Compound
Formula
Role dielectric layer
4

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
5

tungsten selenide multilayer

WSe2
Type Nano Material
Formula
Role conducting layer
6

alumina-titanyl phthalocyanine film

Al2O3/TiOPc
Type Nano Material
Formula
Role top gate dielectric
7

palladium

Type Single Compound
Formula Pd
Role upper gate
8

palladium

Type Single Compound
Formula Pd
Role source
9

palladium

Type Single Compound
Formula Pd
Role drain
10

titanium

Type Single Compound
Formula Ti
Role adhesion layer

Properties

General physical and chemical properties

Property Value Source
current density

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • p+ Si wafer
  • titanium
Product

double-gate WSe2 FET with Al2O3/TiPc as date dielectric

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • p+ Si wafer
  • titanium
Product

double-gate WSe2 FET with Al2O3/TiPc as date dielectric

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • p+ Si wafer
  • titanium
Product

double-gate WSe2 FET with Al2O3/TiPc as date dielectric

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • p+ Si wafer
  • titanium
Product

double-gate WSe2 FET with Al2O3/TiPc as date dielectric

References

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