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chlorobenzene-incorporated Me-4-TFPTA nanosheet-based field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

chlorobenzene-incorporated Me-4-TFPTA nanosheets

Type Nano Material
Formula
Role channel layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

trichloro(octadecyl)-silane

n-octadecyltrichlorosilane trichloro(octadecyl)silane octadecayltrichlorosilane octadecyl trichlorosilane octadecyltrichlorosilane trichlorooctadecylsilane octadecyltrchlorosilane C18-OTS ODTS OTCS OTS
Type
Formula C18H37Cl3Si
Role

Properties

General physical and chemical properties

Property Value Source
air stability

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si wafer
  1. lM3AsasbcyP5WKM3
Product

chlorobenzene-incorporated Me-4-TFPTA nanosheet-based field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • Si wafer
  1. cTlEyBtjBnp5muRE
Product

chlorobenzene-incorporated Me-4-TFPTA nanosheet-based field-effect transistor

References

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