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p-type silicon nanowire field effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

(3-aminopropyl)-triethoxysilane moiety

(3-aminopropyl)trimethoxysilane moiety (3-aminopropyl)triethoxysilane moiety γ-aminopropyltriethoxy silane moiety 3-aminopropyltrimethoxysilane moiety 3-aminopropyltriethoxysilane moiety γ-aminopropyltriethoxysilane moiety (3-aminopropyl)trioxysilane moiety (3-aminopropyl)silanetrioxy group 3-aminopropylsilanetrioxy group 3-aminopropylsiloxy fragment 3-aminopropyl silane moiety 3-aminopropylsilane moiety γ-APTES moiety 3-APTS moiety APTES moiety APTMS moiety AMPS moiety APTS moiety APS moiety
Type
Formula -C3H8NO3Si-
Role
4

boron-doped p-type silicon nanowires

boron-doped p-type SiNW
Type Nano Material
Formula
Role conducting channel
5

chromium

Type Single Compound
Formula Cr
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain
8

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role surface protecting layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
diagnostics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si
  • 3-aminopropyltriethoxysilane
Product

p-type silicon nanowire field effect transistor

Size: not specified

Medium/Support: none

References

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