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graphene FET integrated together with silicon complementary metal-oxide-semiconductor circuit

Based on

1 Articles
2016 Most recent source

Composition

1

p-doped silicon

p-type silicon p-type Si silicon
Type Single Compound
Formula Si
Role substrate
2

phosphorus-doped silicon

Type Complex Compound
Formula
Role channel layer of PMOSFET
3

boron-doped silicon

Type Complex Compound
Formula
Role channel layer of NMOSFET
4

boron disulfide- and boron-doped silicon

Type Complex Compound
Formula
Role source of PMOSFET
5

boron disulfide- and boron-doped silicon

Type Complex Compound
Formula
Role drain of PMOSFET
6

arsenic- and boron-doped silicon

Type Complex Compound
Formula
Role source of NMOSFET
7

arsenic- and boron-doped silicon

Type Complex Compound
Formula
Role drain of NMOSFET
8

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
9

polycrystalline silicon

poly silicon poly-silicon polysilicon silicon poly-Si pc-Si p-Si Si
Type Single Compound
Formula Si
Role gate
10

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role passivation layer
11

aluminum/silicon

Type
Formula
Role
12

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role channel layer of graphene FET
13

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectric of graphene FET
14

gold

Type Single Compound
Formula Au
Role gate of graphene FET
15

palladium/gold film

Pd/Au
Type Nano Material
Formula
Role source of graphene FET
16

palladium/gold film

Pd/Au
Type Nano Material
Formula
Role drain of graphene FET

Properties

General physical and chemical properties

Property Value Source
CMOS oscillator output frequency

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • p-doped silicon
Product

graphene FET integrated together with silicon complementary metal-oxide-semiconductor circuit

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • p-doped silicon
Product

graphene FET integrated together with silicon complementary metal-oxide-semiconductor circuit

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • p-doped silicon
Product

graphene FET integrated together with silicon complementary metal-oxide-semiconductor circuit

References

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