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GaAs-based p-type charge-tunable heterostructure

Based on

1 Articles
2014 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role substrate
2

p-doped gallium arsenide

p-doped GaAs p+ GaAs
Type
Formula
Role
3

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role tunneling barriers
4

indium gallium arsenide quantum dots

InGaAs quantum dots InGaAs QD
Type Nano Material
Formula
Role photoactive layer
5

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role capping layer
6

aluminium arsenide/gallium arsenide short-period superlattice

AlAs/GaAs short-period superlattice AlAs/GaAs SPS
Type
Formula
Role
7

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula AsGa
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge noise

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
anisotropy spectroscopy

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Biological effects

Preparation

References

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