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graphene/hexagonal boron nitride-based interlayer tunnel field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

heavily n-doped silicon

n+-Si
Type
Formula
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
4

multilayer graphene

quadlayer graphene
Type Nano Material
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Source
current density

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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