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ionic liquid-gated thin-film transistor

Based on

1 Articles
2015 Most recent source

Composition

1

VO2 film

Type
Formula
Role
2

ruthenium

Type
Formula Ru
Role
3

gold

Type
Formula Au
Role
4

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
5

1-hexyl-3-methylimidazolium bis((trifluoromethyl)sulfonyl)imide

1-hexyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide [C6mim][NTf2] [Hmim][TFSI] [HMIM]Ntf2 HMIM-TFSI HMITFSI
Type
Formula C12H19F6N3O4S2
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on voltage sweep direction

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
X-ray diffraction

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

ionic liquid-gated thin-film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

ionic liquid-gated thin-film transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
Product

ionic liquid-gated thin-film transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
Product

ionic liquid-gated thin-film transistor

Size: not specified

Medium/Support: none

References

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