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WS2 nanosheet/graphene heterostructure-based transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role back gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

WS2/graphene heterostructure

Type
Formula
Role
4

Ti/Au electrode material

titanium/gold thin film titanium-gold layer titanium/gold film gold/titanium film Ti/Au thin film titanium/gold Au/Ti bilayer Ti/Au film Au/Ti film Ti/Au
Type Nano Material
Formula
Role source
5

Ti/Au electrode material

titanium/gold thin film titanium-gold layer titanium/gold film gold/titanium film Ti/Au thin film titanium/gold Au/Ti bilayer Ti/Au film Au/Ti film Ti/Au
Type Nano Material
Formula
Role drain
6

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
7

aluminium

aluminum
Type Single Compound
Formula Al
Role upper gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
contact resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. F14rgJ79V22TAWYcRprRsk3lfD
Product

WS2 nanosheet/graphene heterostructure-based transistor

Size: not specified

Medium/Support: none

References

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