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MoTe2-based field effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

soda-lime-silica glass

soda-lime glass glass
Type Complex Compound
Formula
Role substrate
2

few layer graphene

few-layer graphene FLG
Type Nano Material
Formula
Role bottom gate
3

few layer boron nitride nanosheets

few layer boron nitride nanosheets hexagonal-boron nitride nanosheets hexagonal boron nitride monolayer monolayer hexagonal boron nitride hexagonal boron nitride flakes boron nitride nanosheets hexagonal boron nitride monolayer h-BN sheets single-layer h-BN thin h-BN layers h-BN nanosheets h-BN nanoflakes h-BN monolayer hBN nanosheets monolayer h-BN BN nanosheets monolayer hBN h-BN flakes h-BN layers h-BN NS hBN NS BN NS FBNNS h-BN BNNS hBN
Type Nano Material
Formula
Role bottom-gate dielectric
4

α-molybdenum ditelluride nanosheets

α-MoTe2 nanoflakes α-MoTe2 NS
Type Nano Material
Formula
Role semiconductor layer
5

few layer graphene

few-layer graphene FLG
Type Nano Material
Formula
Role source
6

few layer graphene

few-layer graphene FLG
Type Nano Material
Formula
Role drain
7

few layer boron nitride nanosheets

few layer boron nitride nanosheets hexagonal-boron nitride nanosheets hexagonal boron nitride monolayer monolayer hexagonal boron nitride hexagonal boron nitride flakes boron nitride nanosheets hexagonal boron nitride monolayer h-BN sheets single-layer h-BN thin h-BN layers h-BN nanosheets h-BN nanoflakes h-BN monolayer hBN nanosheets monolayer h-BN BN nanosheets monolayer hBN h-BN flakes h-BN layers h-BN NS hBN NS BN NS FBNNS h-BN BNNS hBN
Type Nano Material
Formula
Role top gate dielectric
8

few layer graphene

few-layer graphene FLG
Type Nano Material
Formula
Role upper gate
9

gold/titanium layer

gold/titanium layer Ti/Au layer Au/Ti layer Ti/Au film
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. qs6szgwLSkKTfLWpZOkqM29mm514dD9Dr
Product

MoTe2-based field effect transistor

References

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