Loading ...

Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

Bi1.5Sb0.5Te1.7Se1.3-based field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

doped silicon

doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

bismuth antimony telluride selenide flake

Bi1.5Sb0.5Te1.7Se1.3 flake BSTS nanoflake BSTS flake
Type Nano Material
Formula
Role semiconductor layer
4

hexagonal boron nitride

h-BN
Type Nano Material
Formula
Role gate dielectrics
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain
8

gold

Type Single Compound
Formula Au
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
bottom gate capacitance

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
atomic force microscopy

More information available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • bismuth antimony telluride selenide
Product

Bi1.5Sb0.5Te1.7Se1.3-based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • bismuth antimony telluride selenide
Product

Bi1.5Sb0.5Te1.7Se1.3-based field-effect transistor

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial