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indium phosphide quantum dot-based light emitting diode

Based on

1 Articles
2016 Most recent source

Composition

1

indium tin oxide glass

ITO coated glass ITO glass
Type Complex Compound
Formula
Role cathode
2

ZrO2 nanoparticles

Type Nano Material
Formula
Role electron transport layer
3

InP/ZnSe/ZnS quantum dots

InP/ZnSe/ZnS QD
Type Nano Material
Formula
Role emission layer
4

4,4'-di(9H-carbazol-9-yl)-1,1'-biphenyl

4,4'-bis(9-carbazolyl)-1,1'-biphenyl 4,4'-bis(N-carbazolyl)-1,1'-biphenyl 4,4'-bis(9H-carbazol-9-yl)biphenyl 4,4'-di(9H-carbazol-9-yl)biphenyl 4,4'-bis(carbazol-9-yl)biphenyl 4,4'-dicarbazolyl-1,1'-biphenyl N,N'-dicarbazolyl-4,4'-biphenyl 4,4'-bis(N-carbazolyl)biphenyl 4,4'-di(N-carbazolyl)biphenyl DCBP CBP
Type Single Compound
Formula C36H24N2
Role hole transport layer
5

molybdenum(VI) oxide

molybdenum trioxide
Type Single Compound
Formula MoO3
Role hole injection layer
6

aluminium

aluminum
Type Single Compound
Formula Al
Role anode

Properties

General physical and chemical properties

Property Value Source
band energy diagram

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
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  2. rQB8ByO
Product

indium phosphide quantum dot-based light emitting diode

References

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