Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

dual-side gated a-IGZO thin film transistor on polyamide substrate

Based on

1 Articles
2016 Most recent source

Composition

1

polyamide

Type Polymer
Formula
Role substrate
2

Ti/Au/Ti film

Type Nano Material
Formula
Role back gate
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
4

amorphous indium gallium zinc oxide

a-IGZO
Type Complex Compound
Formula
Role channels
5

Ti/Au film

Ti/Au
Type Nano Material
Formula
Role source
6

Ti/Au film

Ti/Au
Type Nano Material
Formula
Role drain
7

1-hexyl-3-methylimidazolium bis((trifluoromethyl)sulfonyl)imide

1-hexyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide [C6mim][NTf2] [Hmim][TFSI] [HMIM]Ntf2 HMIM-TFSI HMITFSI
Type Single Compound
Formula C12H19F6N3O4S2
Role IL gate dielectric
8

Ti/Au film

Ti/Au
Type Nano Material
Formula
Role side IL gate

Properties

General physical and chemical properties

Property Value Source

Full content is available to subscribers only

To view content please choose from the following:

Applications

Area Application Source

Full content is available to subscribers only

To view content please choose from the following:

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gold
  • titanium
  • polyamide
Product

dual-side gated a-IGZO thin film transistor on polyamide substrate

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial