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AlGaN-based ultraviolet light-emitting diode

Based on

1 Articles
2014 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

aluminium nitride

aluminum nitride
Type
Formula AlN
Role
3

n+-aluminium gallium nitride

n+-Al0.6Ga0.4N
Type
Formula
Role
4

aluminium gallium nitride quantum well

Type
Formula
Role
5

aluminium gallium nitride

aluminum gallium nitride
Type Single Compound
Formula Al0.60Ga0.40N
Role current blocking layer
6

p-aluminium gallium nitride

p-Al0.5Ga0.5N
Type
Formula
Role
7

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role UV-transparent conductive electrodes (TCE)
8

nickel

Type Single Compound
Formula Ni
Role top contact

Properties

General physical and chemical properties

Property Value Source
electric current

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
atomic emission spectroscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. e9FgE19echGiH58AxYgGL7Ug5o5mfDf
Product

AlGaN-based ultraviolet light-emitting diode

Method 2

Type: Physical formation
Source:
Starting materials
  1. jGbn0E9doYE4nKGiPA5wVKGbUFXFU0F
Product

AlGaN-based ultraviolet light-emitting diode

References

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