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spin-valve device

Based on

1 Articles
2015 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role substrate
2

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role buffer layer
3

aluminium gallium arsenide/gallium arsenide superlattice

AlGaAs/GaAs superlattice
Type
Formula
Role
4

n-doped gallium arsenide

n-GaAs
Type Complex Compound
Formula
Role channel layer
5

doped gallium arsenide

doped GaAs
Type
Formula
Role
6

n+-doped gallium arsenide

n+-GaAs
Type
Formula
Role
7

aluminium gallium arsenide

AlGaAs
Type
Formula
Role
8

manganese-doped gallium arsenide

(Ga,Mn)As
Type Single Compound
Formula Ga0.945Mn0.055As
Role ferromagnetic electrode

Properties

General physical and chemical properties

Property Value Source
chemical potential splitting

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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