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graphene-based vertical-tunneling transistor

Based on

1 Articles
2016 Most recent source

Composition

1

p-type Si

Type
Formula
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
4

chemically converted graphene

graphene nanoribbon junction single-layer graphene film ion-irradiated graphene monolayer graphene film freestanding graphene single layer graphene single-layer graphene top - gated graphene monolayer graphene graphene film ML graphene graphene CCG FSG SLG GN G
Type
Formula
Role
5

chromium

Type Single Compound
Formula Cr
Role gate
6

gold

Type Single Compound
Formula Au
Role gate
7

chromium

Type Single Compound
Formula Cr
Role drain
8

gold

Type Single Compound
Formula Au
Role drain
9

indium

Type Single Compound
Formula In
Role source

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • p-type Si/SiO2
  1. M7GV2LTqzWmCDJpkvNRqiHjuzE5gIkiyFJUC
Product

graphene-based vertical-tunneling transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • p-type Si/SiO2
  1. bLws8SqcvBqUn7CyICW9N2CQtvugRo662VwN
Product

graphene-based vertical-tunneling transistor

References

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