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hexagonal boron nitride-capped black phosphorus field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

p-doped silicon

p-doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

few-layer black phosphorus flake

few-layer BP flake BP flake
Type Nano Material
Formula
Role semiconductor layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain
7

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role capping layer

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. jNhEtPgBzrFbz
Product

hexagonal boron nitride-capped black phosphorus field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  1. EeD7usQE7QiTQ
Product

hexagonal boron nitride-capped black phosphorus field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  1. KKoYjkN42A527
Product

hexagonal boron nitride-capped black phosphorus field-effect transistor

References

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