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amorphous metal oxide thin-film transistor

Based on

1 Articles
2016 Most recent source

Composition

1

n++-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

indium-gallium-tin-oxide film

IGZO thin film IGZO film
Type Nano Material
Formula
Role channels
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • zinc nitrate
  • indium(III) nitrate
  • Si/SiO2
See all (5)
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  3. Lx4q79s6MdRp5GvpmvQYUNg1xrcNOXL7Nsv2qmMupG13xbohv1lVVKsg6geSfuFNrZkMEFR
  4. U0NvSeTIdhwzxBxxR8jPMnAauhgnQgwzF5U1mJTvalQ2JSJHSfIy5aPYojjbyaqYATGUHiEZH7zKoelng
Product

amorphous metal oxide thin-film transistor

References

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