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high efficiency broadband light source with dot-within-a-dot-in-a-nanowire emitter

Based on

1 Patents
2011 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type
Formula GaN
Role
3

indium gallium nitride quantum dots

InGaN quantum dots InGaN quantum well quantum dots InGaN QD QD
Type
Formula
Role

Properties

Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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