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(SnSxS1-x)2-FET photodetector

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

ultra-thin layered ternary single crystal [Sn(SxSe1-x)2]

single crystalline ternary SnSSe nanosheet few-layered Sn(SxSe1-x)2 single crystal ultra-thin layered ternary SnSSe few-layered SnSSe single crystal few-layered SnSSe nanosheet 2D SnSSe single crystal few-layered SnSe2 flake Sn(SxSe1-x)2 nanosheet few-layered 2D SnSSe few-layered SnSSe 2D layered SnSSe ultrathin SnSSe SnSSe nanosheet SnSSe flake
Type Nano Material
Formula
Role channel layer
4

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role source
5

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role drain

Properties

Sensor properties

Type of sensor Sensor property Source
light sensor for visible-NIR light

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Applications

Area Application Source
sensors (excluding biosensors)

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon/silica
Product

(SnSxS1-x)2-FET photodetector

References

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