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n-type P(NDI2OD-T2) top-gate organic field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
2

Au film on Cr adhesion layer

Au/Cr film
Type Nano Material
Formula
Role source
3

Au film on Cr adhesion layer

Au/Cr film
Type Nano Material
Formula
Role drain
4

poly{[N,N'-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)}

P(NDI2OD-T2)
Type Polymer
Formula
Role n-channel
5

poly(methyl methacrylate)

methyl methacrylate resin PMMA
Type Polymer
Formula
Role dielectric layer
6

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role dielectric layer
7

silver

Type Single Compound
Formula Ag
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • gold
  • chromium
Product

n-type P(NDI2OD-T2) top-gate organic field effect transistor

Size: not specified

Medium/Support: none

References

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