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α-MnTe memory device

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium(III) phosphide

indium phosphide
Type Single Compound
Formula InP
Role substrate
2

nanostructured manganese telluride

Type Nano Material
Formula
Role epitaxial antiferromagnetic layer
3

indium

Type Single Compound
Formula In
Role contacts

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • manganese
  • indium(III) phosphide
  • tellurium
Product

α-MnTe memory device

References

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