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amorphous indium gallium zinc oxide-based thin-film transistor

Based on

1 Articles
2016 Most recent source

Composition

1

poly(ethylene terephthalate)

polyethylene terephthalate polyester PETE PET
Type Polymer
Formula
Role substrate
2

amorphous indium gallium zinc oxide

a-IGZO
Type Complex Compound
Formula
Role semiconductor layer
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
4

polyvinylpyrrolidone

PVP
Type Polymer
Formula
Role gate dielectrics
5

copper

Type Single Compound
Formula Cu
Role gate
6

copper

Type Single Compound
Formula Cu
Role source
7

copper

Type Single Compound
Formula Cu
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
bending stability

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • poly(ethylene terephthalate)
  1. Wc6YUo5FErneRIGtbelR6f5o5rtykYIHAqVG8RTnWpf5lyhWgZ1Kn01jtyc8D8tkcU0CGyuYYt8qltGSRpsfVqXUh1k1hIbjoXk1bQUtZz
Product

amorphous indium gallium zinc oxide-based thin-film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • poly(ethylene terephthalate)
  • copper
Product

amorphous indium gallium zinc oxide-based thin-film transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • poly(ethylene terephthalate)
  1. 2yRmUOiysHJNVuFxzK6DWgQhQVE79s3UxdFB3w5Z4UwidTZceZg8ALUbamLyarCh8tJXviTcBJZHLN9jYIwM1fesK9HwQ9hIfNPie5ijo3
Product

amorphous indium gallium zinc oxide-based thin-film transistor

Size: not specified

Medium/Support: none

References

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