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amorphous indium gallium zinc oxide-based thin-film transistor

Based on

1 Articles
2016 Most recent source

Composition

1

poly(ethylene terephthalate)

polyethylene terephthalate polyester PETE PET
Type Polymer
Formula
Role substrate
2

amorphous indium gallium zinc oxide

a-IGZO
Type Complex Compound
Formula
Role semiconductor layer
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
4

polyvinylpyrrolidone

PVP
Type Polymer
Formula
Role gate dielectrics
5

copper

Type Single Compound
Formula Cu
Role gate
6

copper

Type Single Compound
Formula Cu
Role source
7

copper

Type Single Compound
Formula Cu
Role drain

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • poly(ethylene terephthalate)
  1. MO9TO0QlYq1RMSP0dMeOlCaLsIURNA4jS07ZESovWv6pWEWEO1rs2MTwQBsy5NkjKBbDn5VGE1ql8xzNFZpaU5Kvvx5hK2LCdOWXEeTqtM
Product

amorphous indium gallium zinc oxide-based thin-film transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • poly(ethylene terephthalate)
  • copper
Product

amorphous indium gallium zinc oxide-based thin-film transistor

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • poly(ethylene terephthalate)
  1. pnEGal3J3T8NzExs01KU5V8dkjrS2YT9uPunMQLHZz6hBifDT3tp68g1ZZhE7MQqNqGiAO7jPUD61d4IKrN8M8hySpJ0rodm8EeDsBfJMN
Product

amorphous indium gallium zinc oxide-based thin-film transistor

References

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