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tetracyanoquinodimethane-doped ultrathin ZnO layer-based thin film transistor

Based on

1 Articles
2016 Most recent source

Composition

1

doped silicon

Si++
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

zinc oxide ultrathin film

Type Nano Material
Formula
Role semiconductor layer
4

aluminium oxide

aluminum oxide alumina a-AlOx
Type Single Compound
Formula AlO(x)
Role native oxide layer
5

aluminium

aluminum
Type Single Compound
Formula Al
Role source
6

aluminium

aluminum
Type Single Compound
Formula Al
Role drain
7

7,7,8,8-tetracyano-p-quinodimethane

7,7,8,8-tetracyanoquinododimethane 7,7,8,8-tetracyanoquinodimethane tetracyanoquinodimethane TCNQ
Type Single Compound
Formula C6H4(C(CN)2)2
Role organic dopant layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
change in electron density dependent on organic doping concentration

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • Si++/SiO2
  • zinc oxide dihydrate
  1. GXUhbptF8A82621M6f
  2. m2LzgzGvELx87kWm
Product

tetracyanoquinodimethane-doped ultrathin ZnO layer-based thin film transistor

Size: not specified

Medium/Support: none

References

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