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InGaN/GaN dot-within-a-dot-in-a-nanowire heterostructure

Based on

1 Patents
2011 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

silicon doped GaN nanowires

Type
Formula
Role
3

indium gallium nitride quantum dots

InGaN quantum well InGaN quantum dots quantum dots InGaN QD QD
Type
Formula
Role
4

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type
Formula GaN
Role
5

Mg doped GaN

Type
Formula
Role

Properties

Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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