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IGZO-based thin film transistor with peripheral cilia glued to textile

Based on

1 Articles
2016 Most recent source

Composition

1

textile

Type Complex Compound
Formula
Role substrate
2

PI

Type Polymer
Formula
Role capping layer
3

gold

Type Single Compound
Formula Au
Role drain
4

gold

Type Single Compound
Formula Au
Role source
5

chromium

Type Single Compound
Formula Cr
Role adhesion layer
6

IGZO

Type Complex Compound
Formula
Role semiconductor layer
7

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
8

molybdenum

Type Single Compound
Formula Mo
Role gate
9

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role buffer layer
10

SU-8

Type Polymer
Formula
Role passivation layer
11

poly(dimethylsiloxane)

polydimethylsiloxane PDMS
Type Polymer
Formula
Role glue layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
water permeation ability

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • PI
  1. oGIcKUQRU88KQX1DSemlblhkTSWfPcOImg57SuHxvAvNCmN
Product

IGZO-based thin film transistor with peripheral cilia glued to textile

Size: not specified

Medium/Support: none

References

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