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PPh3-doped Ti-WSe2/h-BN field effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

heavily boron-doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

tungsten(IV) selenide

tungsten diselenide tungsten selenide
Type Single Compound
Formula WSe2
Role semiconductor layer
4

triphenylphosphine

triphenylphosphane PPh3 PPh3 TPP TP
Type Single Compound
Formula C18H15P
Role n-doping layer
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain
8

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
chopped light-induced photocurrent dependent on gate voltage

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • tungsten(IV) selenide
  1. xlwVrfukW7Y7M
Product

PPh3-doped Ti-WSe2/h-BN field effect transistor

Size: not specified

Medium/Support: none

References

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