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Si/SiO2/OTS/polymer/Au bottom gate top contact organic field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

n-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

trichloro(octadecyl)-silane

n-octadecyltrichlorosilane trichloro(octadecyl)silane octadecayltrichlorosilane octadecyl trichlorosilane octadecyltrichlorosilane trichlorooctadecylsilane octadecyltrchlorosilane C18-OTS ODTS OTCS OTS
Type
Formula C18H37SiCl3
Role
4

poly (-C45H65NO2S5-)

Type Polymer
Formula
Role semiconductor layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • trichloro(octadecyl)-silane
  • silicon oxide-covered n-doped silicon
  1. l1lQJM
  2. S3B
  3. 5wmBffgsqUflIauyfHTUP
  4. HN4R7ilb3R
Product

Si/SiO2/OTS/polymer/Au bottom gate top contact organic field-effect transistor

Size: not specified

Medium/Support: none

References

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