Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

InGaN/GaN dot-within-a-dot-in-a-nanowire heterostructure

Based on

1 Patents
2011 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

silicon doped GaN nanowires

Type
Formula
Role
3

indium gallium nitride quantum dots

InGaN quantum dots InGaN quantum well quantum dots InGaN QD QD
Type
Formula
Role
4

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type
Formula GaN
Role
5

Mg doped GaN

Type
Formula
Role
6

indium tin

Type
Formula InSn
Role

Properties

General physical and chemical properties

Property Value Source

Full content is available to subscribers only

To view content please choose from the following:

Applications

Area Application Source

Full content is available to subscribers only

To view content please choose from the following:

Characterization

Method Source

Full content is available to subscribers only

To view content please choose from the following:

Biological effects

Preparation

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial