Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

n-type PTCDI-C8/underside-doped graphene-based organic vertical field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

chromium

Type Single Compound
Formula Cr
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role source
5

poly(iminoethylene)

polyethyleneimine polyaziridine PEI
Type Polymer
Formula
Role doped layer
6

graphene nanosheets

graphene sheets graphene
Type
Formula
Role
7

N,N'-dioctyl-perylene-3,4,9,10-tetracarboxylic acid diimide

N,N'-dioctyl-3,4,9,10-perylenetetracarboxylic diimide N,N'-dioctyl-3,4:9,10-perylene tetracarboxylicdiimide N,N'-dioctyl-3,4,9,10-perylenedicarboximide N,N'-dioctyl perylene diimide PTCDI-C8 PTCDI-C8 PDI-C8 PDI-C8 PDI
Type Single Compound
Formula C40H42N2O4
Role semiconductor layer
8

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current dependent on drain voltage

1 more entry available to subscribers only.

Or, view sample content

Applications

Area Application Source
electronics

0 more entry available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • methane
  1. YQJglEC
  2. rshACiMJnhgInG8nD7wAB21WckEL
Product

n-type PTCDI-C8/underside-doped graphene-based organic vertical field-effect transistor

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial