Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

underside-doped graphene field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

bis(trifluoromethanesulfonyl) imide

bis(trifluoromethanesulfonyl)amide bis(trifluoromethanesulfonyl)amine bis(trifluoromethanesulfonyl)imide bis(trifluoromethane) sulfonamide bis(trifluoromethane)sulfonamide HNTf2 TFSA TFSI
Type Single Compound
Formula C2HF6NO4S2
Role doped layer
4

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role conducting channel
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
Dirac voltage

1 more entry available to subscribers only.

Or, view sample content

Applications

Area Application Source
electronics

0 more entry available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • methane
  1. u43ZyUm
  2. yjeug5v6NbYEtetnyxFwmCZOEjNu
Product

underside-doped graphene field-effect transistor

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial